RF/Microwave Discrete Semiconductors

All types of RF/microwave discrete semiconductors. Forecasts to 2014

Table of Contents for Discrete RF/Microwave Semiconductors Report

Front page and Introductory Part

Section 1 Executive Overview.

1.1 Classes of discrete semiconductors

1.2 Semiconductor materials (crystals and wafers)

1.2.1 GaAs

1.2.2 GaN (gallium nitride)

1.2.3 InP (indium phosphide)

1.2.4 InN (indium nitride)

1.2.5 Si (silicon)

1.2.6 SiC (silicon carbide)

1.2.7 SiGe (silicon germanium)

1.3 Discrete RF Semiconductor Devices

1.3.1 Active Diodes

1.3.2 Passive Diodes

1.3.2.1 Noise-generating Diodes

1.3.2.2 PIN Diodes

1.3.2.3 Schottky (strictly Schottky-barrier) Diodes

1.3.2.4 Varactor Diodes

1.3.3 Transistors

1.3.3.1 GaAs FETs (strictly GaAs MESFETs)

1.3.3.2 HFETs

1.3.3.3 GaN FETs (strictly GaN MESFETs)

1.3.3.4 HBTs

1.3.3.5 HEMTs

1.3.3.6 pHEMTs

1.3.3.7 Silicon LDMOS Transistors

1.3.3.8 Silicon Power MOSFETs

1.3.3.9 Silicon VDMOS Transistors

1.3.3.10 Bipolar Transistors

1.4 Summary of Global Markets


Section 2 Some Product Specifications and Applications

2.1 Gunn Diodes

2.2 IMPATT Diodes

2.3 Noise-generating Diodes

2.4 PIN Diodes

2.5 Schottky Diodes

2.6 Varactor Diodes

2.7 GaAsFETs

2.8 GaAs HFETs

2.9 GaN FETs

2.10 HBTs

2.11 HEMTs

2.12 pHEMTs

2.13 Silicon LDMOS and VDMOS Transistors

2.14 Silicon Power MOSFETs

2.15 Bipolar Transistors





Section 3 Industry Structure and Dynamics

3.1 Details of the Manufacturers and Types of Products Manufactured

3.2 Corporations—including Leaders in Some Categories

3.3 Sales and Distribution Networks


Section 4 Profiles of Players

Accu-Noise
Advanced Semiconductor (ASI)
Aeroflex Microelectronics Solutions (including Metelics)
AMCOM Communications
Avago Technologies
BeMiTec AG
Calmos Technology
Cree
Eclipse Microwave
Elva-1
e2v technologies
Eudyna Devices
Excelics Semiconductor
Ferdinand Braun Institut (FBH)
Freescale Semiconductor
Global Communication Semiconductors
Hexawave
Hughes Research Laboratories (HRL)
Infineon Technologies
Integra Technologies
iTerra Communications
IXYS RF
M/A-COM (Tyco)
Massachusetts Bay Technologies (MBT)
MicroMetrics
Microsemi
Microwave Device Technologies (MDT)
Microwave Technology (MwT)
Mitsubishi
M-Pulse Microwave
NEC
New Japan Radio Co (JRC)
Nitronex
P1dB
Peak Devices
Point Nine Technologies
Polyfet RF Devices

Section 4 Profiles of Players (continued)

RFHIC
RF Micro Devices (RFMD)
Semelab
Semi Dice
Sensitron
Sirenza Microdevices
Skyworks Solutions
Sprague-Goodman Electronics
STMicroelectronics (STM)
Toshiba
Transcom
Universal Semiconductor Technology, Inc. (USTI)
Vishay Intertechnology
WIN Semiconductors
Zetex Semiconductors



Section 5 Market Forecasts — Summaries and Critiques of TAMs 2006 – 2014

5.1 Introduction

5.2 Product Categories, Application Segments & Frequency Bands

5.3 Geographic Regions

5.4 Technology and other Trends Impacting the Markets Generally

5.5 Definitions and Organization of the Data and Forecasts

5.6 Overall Global TAMs

5.7 TAMs in Europe

5.8 TAMs in North America

5.9 TAMs in the Rest of the World (RoW)

5.10 Tables of Market Data (Basis of Column Charts Presented above)


Section 6 Average Selling Prices (ASPs) and Selected Shipment Forecasts
2006 - 2014.

6.1 Introduction

6.2 ASPs for Diodes

6.3 ASPs and Shipments for Small-Signal GaAsFETs

6.4 ASPs and Shipments for Power GaAsFETs

6.5 ASPs and Shipments for pHEMTs

6.6 ASPs for SiGe-based HBTs

6.7 ASPs for 1-W VDMOS RF Transistors

6.8 The Relationship Between ASP ($) and RF Output Power for Power Transistors




Appendix A Industry Directory

Appendix B Glossary of Abbreviations